SiC SBD分立器件
SCH20120DN
- 电压
- 1200V
- 电流
- 20A
- 器件类型
- 碳化硅器件
- 封装形态
- SiC SBD分立器件
20A, 1200V SiC Schottky Barrier Diode The SCH20120DN is a SiC schottky barrier diode. It is base on silicon carbide material, and its switching behavior is independent with temperature. The device has superfast recovery property and lower forward voltage drop, it can be used in switching power supply, solar inverter, PFC and UPS.
同类型号
同为「SiC SBD分立器件」分类的其他型号
需要选型支持或产品资料？
关于 SCH20120DN 的规格书、样品与批量供货，欢迎直接联系我们。